Semiconductor Level Crystal Growing Furnace KX170MCZ-Dalian Linton NC Machine Co., Ltd
Semiconductor Level Crystal Growing Furnace KX170MCZ

Semiconductor Level Crystal Growing Furnace KX170MCZ-Dalian Linton NC Machine Co., Ltd

  • Optimized for 3"-6" CZ Ingot Growth
  • Leading Full Digital Control System
  • Advanced Hotzone Design
  • Advanced CUSP Magnetic Field Reduces the Oxygen
    Content to Improves the Monocrystal Quality
    Effectively

Main Parameter
Performance
Typical Ingot Diameter 150-230 mm (6-10 in)
Pull Chamber Height 2,800 mm (110 in)
Throat Diameter 305 mm (12 in)
Seed Lift Rate 0-508 mm/hr
Seed Jog Speed (Nominal)  508 mm/min
Total Crucible Travel 500 mm (19.6 in )
Crucible Lift Rate 0-254 mm/hr
Crucible Jog Speed (Nominal)  50.8 mm/min
Seed Rotation (Reversible) 0-50 rpm
Crucible Rotation (Reversible)  0-20 rpm
CUPS 1000 Gs

Silicon Charge Capacity
*Hot Zones available to fit following crucible sizes 
**Charges can be enhanced with Xtramelt? Feeder
Crucible Diameter* Crucible Height* Charge Size Cold Pack Enhanced Charge**
24.0 in 16.33 in 170 kg 210 kg
22.0 in 16.33 in 120 kg 150 kg


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